Method for fabricating a gate structure of a FET and gate...

Details Method for fabricating a gate structure of a FET and gate... Method for fabricating a gate structure of a FET and gate...

2006-07-25

2006-07-25

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S306000, C438S524000

Reexamination Certificate

active

07081392

ABSTRACT:
A method for fabricating a gate structure of a FET, having: (a) deposition and patterning of a sacrificial layer sequence on a semiconductor substrate and uncovering of a gate section; (b) implantation of a channel doping into the gate section; (c) deposition and patterning of spacers at the sidewalls of the sacrificial layer sequence with the formation of a gate section that is not covered by the spacers; (d) introduction of a mask material into the gate section that is not covered by the spacers; (e) removal of the spacers selectively with respect to the sacrificial layer sequence and mask material); (f) implantation of a halo doping in regions uncovered by the removed spacers; (g) removal of the mask material; (h) formation of a gate on the gate section; and (j) removal of the sacrificial layer sequence selectively with respect to the gate.

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D. Widmann et al., “Technologie Hochintegrierter Schaltungen,” p. 282, Springer, 2. Auglage, 1996.

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