Method for fabricating a gate mask of a semiconductor device

Details Method for fabricating a gate mask of a semiconductor device Method for fabricating a gate mask of a semiconductor device

2007-12-18

2007-12-18

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S200000, C438S239000, C438S243000, C438S244000, C438S253000, C438S254000, C438S255000, C438S257000, C257SE21293

Reexamination Certificate

active

11231820

ABSTRACT:
A nitride layer of the gate mask for the semiconductor device is deposited at a temperature higher than 750 deg. C so as to release hydrogen from the nitride layer. Alternatively, a nitride layer of the gate mask for the semiconductor device is deposited in a gas atmosphere with use of an ammonia gas and a silane gas such that a flow rate of the ammonia gas is set at least twenty times or greater than that of the silane gas. Accordingly, the problem with respect to the threshold voltages Vt of the semiconductor devices varying greatly from device to device when the polysilicon layer or the amorphous silicon layer is formed in the vicinity of the nitride layer and is doped with Group III impurities, will be solved.

REFERENCES:
patent: 2002/0081794 (2002-06-01), Ito
patent: 2002/0119648 (2002-08-01), Inoue et al.
patent: 5029301 (1993-02-01), None
patent: 5171443 (1993-07-01), None

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