Method for fabricating a gate electrode

Details Method for fabricating a gate electrode Method for fabricating a gate electrode

2005-04-26

2005-04-26

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S585000

Reexamination Certificate

active

06884671

ABSTRACT:
A method for fabricating a gate electrode is disclosed. The present invention is provided a method to utilize the first nitrogen-containing RTP treatment to treat the substrate to form a first barrier layer thereon. Then, the dielectric material has high dielectric constant that is deposited on the first barrier layer to improve the thermal stability and chemical stability of the semiconductor substrate. Next, a second barrier layer and a metal gate layer are sequentially formed on the dielectric layer. After a photolithography process, a gate electrode is formed on the semiconductor substrate. Thereafter, a surface inhibition layer is formed on sidewall of the gate electrode to improve the resistivity and thermal stability for metal gate layer after a second nitrogen-containing RTP treatment is performed on the gate electrode.

REFERENCES:
patent: 5880508 (1999-03-01), Wu
patent: 6251761 (2001-06-01), Rodder et al.
patent: 6417085 (2002-07-01), Batra et al.
patent: 6642131 (2003-11-01), Harada

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