Method for fabricating a flash memory device

Details Method for fabricating a flash memory device Method for fabricating a flash memory device

2005-09-06

2005-09-06

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

06939766

ABSTRACT:
The present invention is a method for fabricating a flash memory device. In one embodiment, a gate structure comprising a tunnel oxide layer, a floating gate layer, an oxide layer, and a control gate layer is fabricated on a semiconductor substrate. A rapid thermal oxidation (RTO) process is then performed to repair the tunnel oxide layer.

REFERENCES:
patent: 5294571 (1994-03-01), Fujishiro et al.
patent: 6165883 (2000-12-01), Hiura
patent: 6582998 (2003-06-01), Nitta
patent: 6617636 (2003-09-01), Tuan et al.

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