Method for fabricating a flash memory cell

Details Method for fabricating a flash memory cell Method for fabricating a flash memory cell

2005-04-12

2005-04-12

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

06878588

ABSTRACT:
The present invention relates to a flash memory cell and method of manufacturing the same. The flash memory cell comprises a trench for defining a semiconductor substrate to be an active region and an inactive region, a trench insulating film burying the trench and having a given protrusion, an impurity region formed in the active region, a floating gate isolated by the protrusion and having rugged portions, and a dielectric film and a control gate formed on the floating gate. Therefore, the present invention can significantly simplify the process, improve the yield of a product and reduce the manufacturing cost.

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