Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-13
2006-06-13
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S659000, C438S766000, C438S595000, C438S528000
Reexamination Certificate
active
07060558
ABSTRACT:
In the course of a method for fabricating a field-effect transistor having a floating gate, a structure is formed which has uncovered sidewalls of a layer made of the material for forming the floating gate and which is exposed to an oxidizing atmosphere in order to coat the sidewalls. At the same time, other regions of the structure have an insulating oxide layer. At a point in time prior to the action of an oxidizing atmosphere, nitrogen is implanted into the material of the floating gate in a quantity that appreciably reduces the oxidation at the sidewalls thereof.
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Hofmann Franz
Strenz Robert
Tempel Georg
Wiesner Robert
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Luu Chuong Anh
Stemer Werner H.
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