Method for fabricating a deep trench capacitor

Details Method for fabricating a deep trench capacitor Method for fabricating a deep trench capacitor

2006-07-18

2006-07-18

Kennedy, Jennifer M. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S248000, C438S244000, C438S392000, C438S391000, C438S389000, C257S303000

Reexamination Certificate

active

07078291

ABSTRACT:
This invention pertains to a method for making a trench capacitor of DRAM devices. A single-sided spacer is situated on the sidewall of a recess at the top of the trench capacitor prior to the third polysilicon deposition and recess etching process. The single-sided spacer is formed on the second polysilicon layer and collar oxide layer. Then, the third polysilicon deposition and recess etching process is carried out to form a third polysilicon layer on the second polysilicon layer. Dopants of the third polysilicon layer are blocked from diffusing to the substrate by the single-sided spacer.

REFERENCES:
patent: 6221735 (2001-04-01), Manley et al.
patent: 6368912 (2002-04-01), Chang et al.
patent: 6552382 (2003-04-01), Wu
patent: 6815307 (2004-11-01), Hsu et al.
patent: 2005/0001256 (2005-01-01), Chen et al.

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