Method for fabricating a cylindrical capacitor for a semiconduct

Details Method for fabricating a cylindrical capacitor for a semiconduct Method for fabricating a cylindrical capacitor for a semiconduct

1996-01-16

1998-03-31

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438240, 438253, 438254, 438396, 438397, H01L 218242

Patent

active

057338086

ABSTRACT:
The present invention provides a method of manufacturing a cylindrical capacitor for a DRAM. A resist layer is first used to pattern a first conductive layer and an oxidation barrier layer into a cylindrical bottom electrode. In a critical step, the resist layer is laterally etched removing a lateral portion of the resist layer thereby exposing an outer cylindrical section of the barrier layer. Using the now narrower (laterally plasma etched) resist layer as a mask, the exposed portions of the oxidation barrier layer are etched away. A masking layer is formed over the sidewalls and the exposed portions of the bottom electrode by an oxidation process. The oxidation barrier layer then is removed. The bottom electrode is anisotropically etched using the masking layer as a mask forming a cylindrical storage electrode. A dielectric layer and top plate electrode are formed over the storage electrode to form the capacitor.

REFERENCES:
patent: 5185282 (1993-02-01), Lee et al.
patent: 5330614 (1994-07-01), Ahn
patent: 5399518 (1995-03-01), Sim et al.
patent: 5403767 (1995-04-01), Kim
patent: 5443993 (1995-08-01), Park et al.
patent: 5543345 (1996-08-01), Liaw et al.
patent: 5547890 (1996-08-01), Tseng
patent: 5550077 (1996-08-01), Tseng et al.

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