Method for fabricating a cylinder capacitor

Details Method for fabricating a cylinder capacitor Method for fabricating a cylinder capacitor

1998-10-14

2000-10-31

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, 438639, H01L 2120

Patent

active

06140201&

ABSTRACT:
A method for fabricating a cylinder capacitor of a DRAM cell that starts with forming a first oxide layer and then a doped first polysilicon layer on a substrate, patterning the first polysilicon layer to form a first opening that exposes the first oxide layer, forming a polysilicon spacer at the laterals of the first opening. Then, a portion of the first oxide layer is removed to expose the substrate by using the polysilicon spacer and the first polysilicon layer as a mask. A doped second polysilicon layer is formed on the first polysilicon layer and in the first opening. A portion of the second polysilicon layer is removed to form a second opening. A oxide spacer is formed on the laterals of the second opening, and is used as mask to remove a portion of the second polysilicon layer for forming a lower electrode. A dielectric layer and then a third polysilicon layer are formed on the lower electrode after the silicon oxide spacer is removed, wherein the third polysilicon is an upper electrode.

REFERENCES:
patent: 5294561 (1994-03-01), Tanigawa
patent: 5323038 (1994-06-01), Gonzalez et al.
patent: 5459091 (1995-10-01), Hwang
patent: 5543345 (1996-08-01), Liaw et al.
patent: 5946566 (1999-08-01), Choi
patent: 5946571 (1999-08-01), Hsue et al.
patent: 6001682 (1999-12-01), Chien

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