Method for fabricating a coaxial capacitor of a semiconductor de

Details Method for fabricating a coaxial capacitor of a semiconductor de Method for fabricating a coaxial capacitor of a semiconductor de

1996-01-11

1997-08-12

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, H01L 218242

Patent

active

056565321

ABSTRACT:
A method for fabricating a coaxial capacitor with increased capacitance which improves the process tolerances was accomplished. Fabricating this improved coaxial capacitor involves forming an annular groove in a polysilicon layer over the node contact opening. Next, sidewall spacers are formed on the sidewalls of the annular groove. A polyoxide masking layer is formed covering the first conductive layer. The sidewall spacers are removed exposing portions of the first conductive layer. The exposed portions of the first conductive layer are then etched using the masking layer as a mask forming a channel surrounding a central spine. The masking layer is removed. The first conductive layer is masking and etched completing the patterning of the ridge and thereby forming a storage electrode having an annual ridge about the central spine. This use of sidewall spacers to define the capacitor ridges allows smaller ridge definition than capable using photolithographic processes and is more controllable. The coaxial capacitor is then completed by depositing a capacitor dielectric and a top capacitor electrode over the storage electrode.

REFERENCES:
patent: 5084405 (1992-01-01), Fazan et al.
patent: 5185282 (1993-02-01), Lee et al.
patent: 5399518 (1995-03-01), Sim et al.
patent: 5403767 (1995-04-01), Kim
patent: 5443993 (1995-08-01), Park et al.
patent: 5516719 (1996-05-01), Ryou

Affiliated with

Also associated with

Rating

Method for fabricating a coaxial capacitor of a semiconductor de does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a coaxial capacitor of a semiconductor de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a coaxial capacitor of a semiconductor de will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-159986