Method for fabricating a charge trapping memory device

Details Method for fabricating a charge trapping memory device Method for fabricating a charge trapping memory device

2011-01-04

2011-01-04

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S314000

Reexamination Certificate

active

07863132

ABSTRACT:
A method for fabricating a charge trapping memory device includes providing a substrate; forming a first oxide layer on the substrate; forming a number of BD regions in the substrate; nitridizing the interface of the first oxide layer and the substrate via a process; forming a charge trapping layer on the first oxide layer; and forming a second oxide layer on the charge trapping layer.

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