Method for fabricating a cell structure for mask ROM

Details Method for fabricating a cell structure for mask ROM Method for fabricating a cell structure for mask ROM

1997-03-28

1999-04-20

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438278, H01L 218246

Patent

active

058952411

ABSTRACT:
A mask read-only-memory cell structure without ROM code implantation is presented. By using double polysilicon technology, ROM code cells which store data "0" can be replaced by cells with double polysilicon layers and an insulating layer between them. Normal cells with double polysilicon layers but without an insulating layer between them form normal cells store data "1". According to the invention, further scaling of mask ROM is possible and operating condition can be released because of high junction breakdown voltage. Furthermore, the double polysilicon technology makes redundancy circuit more easily to implement.

REFERENCES:
patent: 5688661 (1997-11-01), Choi
patent: 5712203 (1998-01-01), Hsu

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