Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-07-17
2007-07-17
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S283000, C257SE21442
Reexamination Certificate
active
10968229
ABSTRACT:
A method for fabricating a Finfet device with body contacts and a device fabricated using the method are provided. In one example, a silicon-on-insulator substrate is provided. A T-shaped active region is defined in the silicon layer of the silicon-on-insulator substrate. A source region and a drain region form two ends of a cross bar of the T-shaped active region and a body contact region forms a leg of the T-shaped active region. A gate oxide layer is grown on the active region. A polysilicon layer is deposited overlying the gate oxide layer and patterned to form a gate, where an end of the gate partially overlies the body contact region to complete formation of a Finfet device with body contact.
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Chen Hou-Yu
Chen Yi-Lang
Hu Chenming
Yang Fu-Liang
Yang Kuo-Nan
Chaudhari Chandra
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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