Method for evaluating epitaxial layers and test pattern for proc

Details Method for evaluating epitaxial layers and test pattern for proc Method for evaluating epitaxial layers and test pattern for proc

1994-06-03

1995-12-19

Rosenberger, Richard A.

Optics: measuring and testing

By configuration comparison

With photosensitive film or plate

117 85, G01B 1106

Patent

active

054773253

ABSTRACT:
In a method for evaluating thickness of a semiconductor layer epitaxially growing on a main surface of a substrate, a parallel stripe-shaped ridges extending are formed on the surface of the substrate, and a semiconductor layer is epitaxially grown on the surface of the substrate including the stripe-shaped ridges while irradiating the stripe-shaped ridges with light and monitoring from the stripe-shaped ridges to evaluate the thickness of the epitaxially growing semiconductor layer. The thickness of the epitaxial layer is evaluated with high precision during the epitaxial growth process.

REFERENCES:
Bilenko et al., "Monitoring the Thickness of Layers During the Process of Selective Accretion or Etching," Saratou State University, Translated from Pribory i Tekhnika Eksperimenta, No. 5, pp. 231-233, Sep.-Oct. 1972.

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