Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-14
2007-08-14
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S615000, C438S015000, C257S779000, C257S780000, C714S004110, C714S006130
Reexamination Certificate
active
11614167
ABSTRACT:
A method of reducing a likelihood that a die pad will be delaminated from a die in an integrated circuit die package for a structure design during an attachment of a heat sink member to the die pad using solder, is provided. A sample structure of the structure design is evaluated to determine whether a volume of last solidification for the solder is centrally located with respect to the die pad and is located at or near an interface of the solder and the die pad. If the last solidification volume is centrally located and is located at or near the interface of the solder and the die pad, and if the die pad is delaminated from the die, the structure design is modified so that less metal of the heat sink member is centrally located than before the modifying.
REFERENCES:
patent: 5956606 (1999-09-01), Burnette
patent: 5959356 (1999-09-01), Oh
Brady III Wade James
Huynh Andy
Nguyen Thinh T
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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