Method for etching transistor gates using a hardmask

Details Method for etching transistor gates using a hardmask Method for etching transistor gates using a hardmask

1996-10-01

1998-12-22

Geist, Gary

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438719, 438738, 438659, 252 791, H01L 213065

Patent

active

058519262

ABSTRACT:
An etchant composition of nitrogen trifluoride and chlorine, preferably also including a passivation material such as hydrogen bromide, etches tungsten silicide-polysilicon gate layers with high selectivity to a thin underlying silicon oxide gate oxide layer to form straight wall, perpendicular profiles with low microloading and excellent profile control.

REFERENCES:
patent: 5188704 (1993-02-01), Babie et al.
patent: 5228950 (1993-07-01), Webb et al.
patent: 5346586 (1994-09-01), Keller
patent: 5358601 (1994-10-01), Cathey
patent: 5431772 (1995-07-01), Babie et al.
patent: 5605601 (1997-02-01), Kawasaki

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