Method for etching silicon carbide

Details Method for etching silicon carbide Method for etching silicon carbide

2005-07-19

2005-07-19

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S719000

Reexamination Certificate

active

06919278

ABSTRACT:
A system and method for achieving a silicon carbide to low-k dielectric etch selectivity ratio of greater than 1:1 using a chlorine containing gas and either hydrogen (H2) gas or nitrogen (N2) gas is described. The method is applied to a semiconductor substrate having a low-k dielectric layer and a silicon carbide layer. The chlorine containing gas is a gas mixture that includes either HCl, BCl3, Cl2, or any combination thereof. In one embodiment, the method provides for supplying an etchant gas comprising a chlorine containing gas and a hydrogen (H2) gas. The etchant gas is then energized to generate a plasma which then etches openings in the silicon carbide at a faster etch rate than the low-k dielectric etch rate. In an alternative embodiment, the etchant gas mixture comprises a chlorine containing gas and a nitrogen (N2) gas.

REFERENCES:
patent: 3398033 (1968-08-01), Haga et al.
patent: 4351894 (1982-09-01), Yonezawa et al.
patent: 4595453 (1986-06-01), Yamazaki et al.
patent: 4735920 (1988-04-01), Stephanie et al.
patent: 4865685 (1989-09-01), Palmour et al.
patent: 4981551 (1991-01-01), Palmour et al.
patent: 5254215 (1993-10-01), Terakado et al.
patent: 5356478 (1994-10-01), Chen et al.
patent: 5626775 (1997-05-01), Roberts et al.
patent: 5647953 (1997-07-01), Williams et al.
patent: 5681424 (1997-10-01), Saito et al.
patent: 5756400 (1998-05-01), Ye et al.
patent: 5770523 (1998-06-01), Hung et al.
patent: 5817578 (1998-10-01), Ogawa
patent: 5820723 (1998-10-01), Benjamin et al.
patent: 5928967 (1999-07-01), Radens et al.
patent: 5981551 (1999-11-01), Luengo et al.
patent: 6040248 (2000-03-01), Chen et al.
patent: 6074514 (2000-06-01), Bjorkman et al.
patent: 6090304 (2000-07-01), Zhu et al.
patent: 6103590 (2000-08-01), Swanson et al.
patent: 6136211 (2000-10-01), Qian et al.
patent: 6153935 (2000-11-01), Edelstein et al.
patent: 6211032 (2001-04-01), Redford et al.
patent: 6261892 (2001-07-01), Swanson
patent: 6284149 (2001-09-01), Li et al.
patent: 6284657 (2001-09-01), Chooi et al.
patent: 6387819 (2002-05-01), Yu
patent: 6399424 (2002-06-01), Matsuura et al.
patent: 6528426 (2003-03-01), Olsen et al.
patent: 6617244 (2003-09-01), Nishizawa
patent: 6743725 (2004-06-01), Hu et al.
patent: 4310345 (1994-10-01), None
patent: 0600664 (1994-06-01), None
patent: 0926715 (1999-06-01), None
patent: 63-152125 (1998-06-01), None
patent: 2001102447 (2001-04-01), None
patent: WO 9952135 (1999-10-01), None
Lo, T.C. et al., “Reactive ion etching of a-SiC :H films using CCl4and O2gas mixture”, Journal of Vacuum Science and Technology: Part A, American Institute of Physics., New York, US, vol. 11, No. 2, Mar. 1, 1993.
PCT International Search Report, PCT/US02/21863 dated Jan. 29, 2003.
Moalem et al., “Low-temperature vapor-phase etching of silicon carbide by dioxygen difluoride”, Applied Phys. Lett., 1995, pp. 3480-3482, vol. 66(25), American Institute of Physics, New York, USA.
U.S. Appl. No. 10/430,013, filed May 6, 2003, Inventor Si Yi Li.

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