Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Utility Patent
1998-04-16
2001-01-02
Huff, Mark F. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
C430S314000, C430S325000
Utility Patent
active
06168907
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method for fabricating a semiconductor device and, more particularly, to a method for etching a semiconductor device suitable for forming micron contact hole having a size of less than limit resolution power of exposure equipments.
2. Discussion of the Related Art
when photoresist is exposed to light, radiation, heat, and various energies, its inner feature is changed. Polymer, solvent and sensitizer are three main elements constituting photoresist.
A background method for patterning photoresist will be described with reference to the attached drawings.
FIGS. 1A
to
1
E are cross-sectional views showing process steps of a background method for patterning photoresist.
First a photoresist film
2
is coated on an etched object
1
, as shown in FIG.
1
A. Then the photoresist film
2
is selectively patterned with an exposure process, as shown in FIG.
1
B. The exposure process causes chemical change of the photoresist film
2
. Due to the chemical change, the exposed part and the unexposed part of the photoresist film
2
have different speeds of development. Using the different development speeds, the photoresist film
2
is patterned with a wet development process, as shown in FIG.
1
C.
Subsequently, the etched object
1
is selectively etched by using the patterned photoresist film
2
as a mask, as shown in FIG.
1
D. Next, the photoresist film
2
is all removed as shown in FIG.
1
E.
Such a background method for etching semiconductor device has disadvantage that it is impossible to etch photoresist having a pattern size of less than the limit resolution power of an exposure equipment. It is the resolution power of an exposure equipment that sizes of patterned areas such as contact holes depend on. That is to say, it is hard to realize patterned areas having a pattern size of less than the limit resolution power of an exposure equipment that patterns photoresist. Further, since opening area of a mask is small, contrast and intensity of aerial image are small. Thus it is hard to pattern a photoresist film having a high aspect ratio. Besides, etch bias is seriously generated because the patterned part of photoresist is slope.
SUMMARY OF THE INVENTION
Therefore, the present invention is directed to a method for etching a semiconductor device that substantially obviates one or more of problems due to limitations and disadvantages of the related art.
An object of the invention is to provide a method for fabricating a semiconductor device in which micron contact holes having sizes of less than the limit resolution power of an exposure equipment.
Additional features and advantages of the invention will be set forth in the description which follows and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, the method for etching a semiconductor device includes the steps of coating an etch mask; selectively patterning the etch mask on the etched object layer to form an open area; and swelling side part of the patterned etch mask.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
REFERENCES:
patent: 4808511 (1989-02-01), Holmes
patent: 5108875 (1992-04-01), Thackeray
patent: 5550007 (1996-08-01), Taylor
patent: 5925494 (1999-07-01), Horn
patent: 5925578 (1999-07-01), Bae
patent: 6100014 (2000-08-01), Lin
patent: 53070666 (1978-06-01), None
American Chemical Society, Washington D.C. 1994, “Introduction to Microlithography”, pp 238-251.
Choi Yong Kyoo
Kim Byeong Chan
Barreca Nicole
Fleshner & Kim LLP
Huff Mark F.
Hyundai Electronics Industries Co,. Ltd.
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