Semiconductor device manufacturing: process – Silicon carbide semiconductor
Patent
1994-02-17
2000-03-07
Saadat, Mahshid
Semiconductor device manufacturing: process
Silicon carbide semiconductor
438695, 438165, 257769, 257770, 257915, H01L 2348, H01L 2352, H01L 2940
Patent
active
060340010
ABSTRACT:
A method for selective conductivity etching of a silicon carbide (SiC) semiconductor includes forming a p-type SiC layer on a substrate layer, forming an n-type SiC layer on the p-type SiC layer, and photoelectrochemically etching selected portions of the n-type SiC layer by applying a bias voltage to the n-type SiC layer in a hydrofluoric acid (HF) solution while exposing the layer to a pattern of UV light. The bias potential is selected so that the n-type SiC layer will photo-corrode and the p-type SiC layer will be inert and act as an etch stop. The light pattern exposure of the n-type SiC layer may be done by applying a photolithographic mask to the layer, by projecting a collimated light beam through a patterned mask, or by scanning with a focused micrometer-sized laser beam on the semiconductor surface.
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Goldstein David
Kurtz Anthony D.
Shor Joseph S.
Clark Jhihan B
Kulite Semiconductor Products Inc.
Plevy Arthur L.
Saadat Mahshid
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