Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-05-24
2005-05-24
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S714000
Reexamination Certificate
active
06897155
ABSTRACT:
A method for operating a plasma reactor to etch high-aspect-ratio features on a workpiece in a vacuum chamber. The method comprises the performance of an etch process followed by a flash process. During the etch process, a first gas is supplied into the vacuum chamber, and a plasma of the first gas is maintained for a first period of time. The plasma of the first gas comprises etchant and passivant species. During the flash process, a second gas comprising a deposit removal gas is supplied into the vacuum chamber, and a plasma of the second gas is maintained for a second period of time. The DC voltage between the workpiece and the plasma of the second gas during the second period of time is significantly less than the DC voltage between the workpiece and the plasma of the first gas during the first period of time.
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Grewal Virinder
Henke Axel
Khan Anisul H.
Kumar Ajay
Pamarthy Sharma V.
Applied Materials Inc.
Bach Joseph
Chen Kin-Chan
Moser Patterson & Sheridan LLP
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