Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-04-29
1998-12-01
Dang, Thi
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438724, H01L 2100
Patent
active
058438475
ABSTRACT:
A method of etching a dielectric layer on a substrate with high etching selectivity, low etch rate microloading, and high etch rates is described. In the method, the substrate is placed in a process zone, and a plasma is formed from process gas introduced into the process zone. The process gas comprises (i) fluorocarbon gas for etching the dielectric layer and for forming passivating deposits on the substrate, (ii) carbon-oxygen gas for enhancing formation of the passivating deposits, and (iii) nitrogen-containing gas for etching the passivating deposits on the substrate. The volumetric flow ratio of fluorocarbon:carbon-oxygen:nitrogen-containing gas is selected to provide a dielectric to resist etching selectivity ratio of at least about 10:1, an etch rate microloading of <10%, and a dielectric etch rate of at least about 100 nm/min. Preferably, the volumetric flow ratio of fluorocarbon:carbon-oxygen:nitrogen-containing gas is selected so that the rate of formation of passivating deposits on the sidewalls of the freshly etched features is approximately equal to the rate of removal of the passivating deposits.
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Pu Bryan
Shan Hongching
Welch Michael
Applied Materials Inc.
Dang Thi
Janah Ashok K.
Sgarbossa Peter J.
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