Method for etching aluminum metal films

Details Method for etching aluminum metal films Method for etching aluminum metal films

1996-03-15

1998-10-27

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

438707, 438720, 438732, 438733, 438738, 438742, C23F 120, H01L 2100

Patent

active

058274367

ABSTRACT:
A mixed etching gas consisting of boron trichloride, a rare gas, and chlorine is used for etching of an aluminum metal film by dry-etching. In the first step, high frequency power is used to etch and remove alloy grains which tend to form residues and to etch an aluminum metal film in an anisotropic mode. Just before the under-layered silicon film is exposed, the frequency power is lowered but is kept higher than the minimum power required for anisotropic etching to enable etching selectivity with respect to the silicon dioxide film to be achieved.

REFERENCES:
patent: 4505782 (1985-03-01), Jacob et al.
patent: 4986877 (1991-01-01), Tachi et al.
patent: 5259922 (1993-11-01), Yamano et al.
patent: 5376211 (1994-12-01), Harada et al.
patent: 5404079 (1995-04-01), Ohkuni et al.
patent: 5428234 (1995-06-01), Sumi
Wolf, Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, pp. 332-334, 574, 1986.

Affiliated with

Also associated with

Rating

Method for etching aluminum metal films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for etching aluminum metal films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for etching aluminum metal films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1611533