Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-09-16
2008-09-16
Vinh, Lan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000, C438S710000, C438S714000, C438S738000
Reexamination Certificate
active
10721932
ABSTRACT:
The present invention provides a method for etching a substrate, a method for forming an integrated circuit, an integrated circuit formed using the method, and an integrated circuit. The method for etching a substrate includes, among other steps, providing a substrate140having an aluminum oxide etch stop layer130located thereunder, and then etching an opening150, 155, in the substrate140using an etchant comprising carbon oxide, a fluorocarbon, an etch rate modulator, and an inert carrier gas, wherein a flow rate of the carbon oxide is greater than about 80 sccm and the etchant is selective to the aluminum oxide etch stop layer130. The aluminum oxide etch stop layer may also be used in the back-end of advanced CMOS processes as a via etch stop layer.
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Albrecht Martin G.
Celii Francis G.
Dostalik, Jr. William W.
Moise Ted S.
Summerfelt Scott R.
Brady III Wade J.
Vinh Lan
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