Method for etching a dielectric layer on a semiconductor

Details Method for etching a dielectric layer on a semiconductor Method for etching a dielectric layer on a semiconductor

1995-09-29

1997-01-14

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566561, 1566261, 1566421, 216 90, 216 84, 216 93, H01L 21311

Patent

active

055935389

ABSTRACT:
A wet etching process (10) etches sacrificial oxide on a substrate without damaging a polycrystalline silicon structure on the substrate. The etching process (10) includes dipping the substrate in a surfactant (11), submerging a portion of the substrate in a recirculating bath of the etchant while injecting an inert gas into the etchant (12) to purge the etchant of oxygen, rinsing the substrate in deionized water (14), submerging a portion of the substrate in a hydrogen peroxide solution (15), rinsing the substrate for a second time (17), and drying the substrate in isopropyl alcohol vapor (18). The inert gas injected into the etchant displaces oxygen dissolved in the etchant and protects the polycrystalline silicon structure from being etched.

REFERENCES:
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patent: 4799991 (1989-01-01), Dockrey
patent: 4828751 (1989-05-01), Kremer
patent: 4971654 (1990-11-01), Schnegg et al.
patent: 5000207 (1991-03-01), Titterington et al.
patent: 5464480 (1995-11-01), Matthews
patent: 5468338 (1995-11-01), Shahid
Kerns et al., RCA REVIEW, pp. 188-190, Jun. 1970.
Pieter Burggraaf, Semiconductor International, "Wet Processing: Alive, Well and Futuristic", Jul. 1990, pp. 59-63.

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