Method for establishing shallow junction in semiconductor device

Details Method for establishing shallow junction in semiconductor device Method for establishing shallow junction in semiconductor device

2000-01-07

2000-12-26

Dinh, Son T.

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

257607, H01L 21425

Patent

active

061658774

ABSTRACT:
A method for making a semiconductor device including a silicon substrate includes implanting Nitrogen into the substrate after gate stack formation and before source/drain dopant implantation. The Nitrogen is implanted and then annealed as appropriate to establish shallow junction regions and minimal overlap regions in the substrate. Then, the source/drain dopant is implanted and activated, with the dopant essentially being constrained by the Nitrogen to remain concentrated in the shallow junction and minimal overlap regions, thereby minimizing junction capacitance and overlap capacitance in the finished device and consequently improving the speed of operation of the device.

REFERENCES:
patent: 5514902 (1996-05-01), Kawasaki et al.
patent: 5825066 (1998-10-01), Buynoski
patent: 5908312 (1999-06-01), Cheung et al.

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