4. Supports: cabinet structure
  5. For storing audio or visual recording medium
  6. Disk or parallelepiped shape

Scott M. Johnson

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Method for epitaxial growth of twin-free, (111)-oriented II-VI a

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

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Multilayer buffer structure including II-VI compounds on a silic

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent

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Unit for storing and dispensing disks

Supports: cabinet structure – For storing audio or visual recording medium – Disk or parallelepiped shape
Patent

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Profile ID: LFUS-PAI-P-530518

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