Method for epitaxial growth and apparatus for epitaxial growth

Details Method for epitaxial growth and apparatus for epitaxial growth Method for epitaxial growth and apparatus for epitaxial growth

1998-01-23

2000-08-29

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118726, 118729, C23C 1400

Patent

active

061102903

ABSTRACT:
This invention concerns a method for epitaxial growth by the use of a so-called heterogeneous reaction and includes disposing a source material in a first area of a horizontal chamber, disposing a growth substrate in a second area thereof, heating the first area thereby keeping the source material at a first temperature, heating the second area thereby keeping the growth substrate at a second temperature, lower than the first temperature, introducing a reaction gas into the chamber thereby causing the reaction gas to react with the source material and depositing the resultant reaction product on the growth substrate and consequently obtaining formation of a film by epitaxial growth.

REFERENCES:
patent: 3047438 (1962-07-01), Marinace
patent: 4100879 (1978-07-01), Goldin
patent: 4171996 (1979-10-01), Maslov
patent: 4314873 (1982-02-01), Wieder
patent: 4464222 (1984-08-01), Gutsche
patent: 4468278 (1984-08-01), Cadoret
patent: 4507169 (1985-03-01), Nogami
patent: 5275687 (1994-01-01), Choquette

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