Method for epitaxial growth

Details Method for epitaxial growth Method for epitaxial growth

1995-07-24

1998-06-23

Niebling, John

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117107, C30B 2300

Patent

active

057699429

ABSTRACT:
This invention concerns a method for epitaxial growth by the use of a so-called heterogeneous reaction and includes disposing a source material in a first area of a horizontal chamber, disposing a growth substrate in a second area thereof, heating the first area thereby keeping the source material at a first temperature, heating the second area thereby keeping the growth substrate at a second temperature, lower than the first temperature, introducing a reaction gas into the chamber thereby causing the reaction gas to react with the source material and depositing the resultant reaction product on the growth substrate and consequently obtaining formation of a film by epitaxial growth.

REFERENCES:
patent: 4100879 (1978-07-01), Goldin
patent: 4171996 (1979-10-01), Maslov
patent: 4464222 (1984-08-01), Gutsche
patent: 4468278 (1984-08-01), Cadoret
patent: 5275687 (1994-01-01), Choquette
U.S. English Language Abstract for Japanese 43-21367.

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