Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-11-23
2000-05-23
Fourson, George
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438398, 438753, 438171, 438190, 438210, 438488, H01L 21302, H01L 2128
Patent
active
060665297
ABSTRACT:
The present invention provides a method for enlarging the surface area of hemi-spherical grains on the surface of a semiconductor chip. The hemi-spherical grain structure is formed by combining a poly-silicon layer with an underlying amorphous silicon layer. In processing, the two layers are etched with a corrosive solution that etches the amorphous silicon layer at a higher rate than it etches the poly-silicon layer. In this way, a ring-shaped slot forms at the bottom of each hemi-spherical grain thus increasing the total surface area of the hemi-spherical grain structure. Furthermore, surface area of the storage node is increased and the cell capacitor capacitance increases in excess of 15%.
REFERENCES:
patent: 5726085 (1998-03-01), Crenshaw et al.
patent: 5783495 (1998-07-01), Li et al.
Ghandhi, S. "VLSI Fabrication Principles", John Wiley & Sons, pp. 485 and 518, 1983.
Chung Yi-Fu
Kao Ming-Kuan
Li Jui-Ping
Lin Ping-Wei
Fourson George
Garcia Joannie A.
Hsu Winston
Mosel Vitelic Inc.
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