Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-13
2008-11-25
Dang, Trung (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S681000, C438S686000
Reexamination Certificate
active
07456101
ABSTRACT:
Methods for depositing a ruthenium metal layer on a dielectric substrate are provided. The methods involve, for instance, exposing the dielectric substrate to an amine-containing compound, followed by exposing the substrate to a ruthenium precursor and an optional co-reactant such that the amine-containing compound facilitates the nucleation on the dielectric surface.
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Blackburn Jason M.
Dalton Jeremie
Drewery John
Gopinath Sanjay
van den Hoek Willibrordus Gerardus Maria
Dang Trung
Novellus Systems Inc.
Weaver Austin Villeneuve & Sampson LLP
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