Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-01
2007-05-01
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S686000
Reexamination Certificate
active
10868384
ABSTRACT:
Methods for depositing a ruthenium metal layer on a dielectric substrate are provided. The methods involve, for instance, exposing the dielectric substrate to an amine-containing compound, followed by exposing the substrate to a ruthenium precursor and an optional co-reactant such that the amine-containing compound facilitates the nucleation on the dielectric surface.
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U.S. Appl. No. 10/772,109, entitled “Use of Metallocenes to Inhibit Copper Oxidation during Semiconductor Processing”, by Dalton et al., filed on Feb. 3, 2004.
Blackburn Jason M.
Dalton Jeremie
Drewery John
Gopinath Sanjay
van den Hoek Willibrordus Gerardus Maria
Beyer Weaver LLP.
Dang Trung
Novellus Systems, Inc
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