Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-05-23
2006-05-23
Goudreau, George A. (Department: 1763)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S715000, C438S717000, C438S740000, C438S723000, C438S724000, C438S743000, C438S744000
Reexamination Certificate
active
07049244
ABSTRACT:
A process for controlling the plasma etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by (1) maintaining various portions of the etch chamber at elevated temperatures, and/ox (2) using an etch chemistry having a fluorohydrocarbon gas containing at least as many hydrogen atoms as fluorine atoms, preferably CH2F2or CH3F.
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Becker David S.
Blalock Guy T.
Roe Fred L.
Goudreau George A.
Micro)n Technology, Inc.
Wong Cabello Lutsch Rutherford & Brucculeri LLP
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