Method for enhancing oxide to nitride selectivity through the us

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

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438743, 438744, 438715, 438723, H01L 2100, H01L 21302

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058800360

ABSTRACT:
A process for controlling the etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by maintaining various portions of the etch chamber at elevated temperatures.

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