Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-08-04
2000-01-18
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438715, 438723, 438724, 438740, H01L 21302
Patent
active
060157607
ABSTRACT:
A process for controlling the etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by maintaining various portions of the etch chamber at elevated temperatures.
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Becker David S.
Blalock Guy T.
Roe Fred L.
Goudreau George
Micro)n Technology, Inc.
Powell William
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