Method for enhancing FSG film stability

Details Method for enhancing FSG film stability Method for enhancing FSG film stability

2007-06-05

2007-06-05

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S624000, C257S644000, C257SE21276

Reexamination Certificate

active

10999547

ABSTRACT:
A method for enhancing stability of a fluorinated silicon glass layer is disclosed. A fluorinated silicon glass layer provided on a substrate is subjected to a phosphorous-containing and hydrogen-containing gas such as phosphine (PH3), for example. The gas forms reactive hydrogen species which removes fluorine radicals and reactive phosphorous species which forms a moisture-gettering and ion-gettering phosphorious oxide film the layer.

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