Method for enhanced inductive coupling to plasmas with reduced s

Details Method for enhanced inductive coupling to plasmas with reduced s Method for enhanced inductive coupling to plasmas with reduced s

1995-04-05

1997-04-22

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 67, 216 70, 20419232, 427569, 427585, 427598, 438731, C03C 2506, H05H 124

Patent

active

056226357

ABSTRACT:
A method of gas plasma treating a workpiece in a process chamber having RF coil outside the chamber, a flat dielectric window, and a electrically conducting shield, adapted to be located between the RF coil and the dielectric window. The shield comprises a planar body section having a periphery, central opening, and outer gaps forming a substantially continuous opening about the periphery. A uniform magnetic field, inductively coupled with the plasma, is formed by routing the flux lines of the magnetic field through the central opening and outer gaps of the shield. Contamination from sputtering is substantially eliminated by reducing the capacitive electric fields generated by the coil that interfere with the inductive coupling between the coil and the gas plasma.

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