Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1997-05-05
2000-11-21
Beck, Shrive
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
42725537, 438787, 438790, C23C 1640
Patent
active
061499749
ABSTRACT:
A method and apparatus for reducing surface sensitivity of a TEOS/O.sub.3 SACVD silicon oxide layer, formed over a substrate, that deposits a ramp layer while ramping pressure to a target deposition pressure and deposits an SACVD layer over the ramp layer. In one embodiment, the flow of ozone is stopped during the pressure ramp-up to control the thickness of the ramp layer.
REFERENCES:
patent: 4260647 (1981-04-01), Wang et al.
patent: 4835114 (1989-05-01), Satou et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 4892753 (1990-01-01), Wang et al.
patent: 4956312 (1990-09-01), Van Laarhoven
patent: 4987005 (1991-01-01), Suzuki et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5040046 (1991-08-01), Chhabra et al.
patent: 5098865 (1992-03-01), Machado et al.
patent: 5120680 (1992-06-01), Foo et al.
patent: 5158644 (1992-10-01), Cheung et al.
patent: 5182231 (1993-01-01), Hongo et al.
patent: 5210801 (1993-05-01), Fournier et al.
patent: 5271972 (1993-12-01), Kwok et al.
patent: 5286518 (1994-02-01), Cain et al.
patent: 5290736 (1994-03-01), Sato et al.
patent: 5319247 (1994-06-01), Matsuura
patent: 5332694 (1994-07-01), Suzuki
patent: 5354715 (1994-10-01), Wang et al.
patent: 5356722 (1994-10-01), Nguyen et al.
patent: 5362526 (1994-11-01), Wang et al.
patent: 5393708 (1995-02-01), Hsia et al.
patent: 5399389 (1995-03-01), Hieber et al.
patent: 5403630 (1995-04-01), Matsui et al.
patent: 5403779 (1995-04-01), Joshi et al.
patent: 5413967 (1995-05-01), Matsuda et al.
patent: 5426076 (1995-06-01), Moghadam
patent: 5429995 (1995-07-01), Nishiyama et al.
patent: 5502006 (1996-03-01), Kasagi
patent: 5814377 (1998-09-01), Robles et al.
K. Fujino et al., "Dependence of Deposition Rate on Base Materials in TEOS/O.sub.3 AP CVD," VMIC Conference--Jun. 12-13, 1990, pp. 187-193.
J. Matsuura et al., "Substrate-Dependent Characteristics of APCVD Oxide Using TEOS and Ozone," Extended Abstracts of the 22nd International Soild State Devices and Materials--Sendia, Hotel Sendai Plaza--Aug. 22-24, 1990, pp. 239-242.
K. Fujino et al., "Dependence of Deposition Characteristics on Base Materials in TEOS and Ozone CVD at Atmospheric Pressure," J. Electrochemical Society, vol. 138, No. 2, pp. 550-554 (Feb. 1991).
R.K. Chanana et al., "Effect of Annealing and Plasma Precleaning on the Electrical Properties of N.sub.2 O/SiH.sub.4 PECVD Oxide as Gate Material in MOSFETs and CCDs," Solid-State Electronics, vol. 36, No. 7, pp. 1021-1026 (Jul. 1993).
E.J. McInerney et al., "A Planarized SiO.sub.2 Interlayer Dielectric with Bias-CVD," IEEE Transactions on Electron Devices, vol. ED-34, No. 3, pp. 615-619 (Mar. 1987).
K. Kwok et al., "Surface Related Phenomena in Integrated PECVD/Ozone-TEOS SACVD Processes for Sub-Half Micron Gap Fill: Electrostatic Effects," J. Electrochemical Society, vol. 141, No. 8, pp. 2172-2177 (Aug. 1994).
Lee Peter W.
Liao Ruby
Nguyen Bang C.
Vankataranan Shankar
Applied Materials Inc.
Beck Shrive
Chen Bret
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