Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1995-12-07
1998-07-21
Nuzzolillo, M.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430313, 430315, 438 14, G03C 500
Patent
active
057833664
ABSTRACT:
A method is described whereby a wafer having a layer of photoresist on its surface, can be subjected to ion implantation just prior to examination by a scanning-electron-microscope(SEM) thereby rendering the photoresist sufficiently conductive that charging of the surface does not occur within the SEM. Accumulation of surface charge on specimens in the SEM causes gross image distortion and obliteration. The technique is particularly useful for inspecting a developed photoresist layer on an insulating layer such as silicon oxide prior to oxide etching. Such is the case when the wafer is being inspected for photoresist quality and pattern dimensions prior to contact opening. The resist mask is developed and subjected to a low dosage ion implant. Images are rendered crisp and clear allowing for accurate measurements. The ability to test the photo pattern at this point is cost effective in that it permits the option of photoresist re-work, and lessens the need for a post-etch inspection.
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Chen Hsin-Pai
Cheng Dong-Shiuh
Ackerman Stephen B.
Nuzzolillo M.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
Ver Steeg Steven H.
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