Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-10-23
1999-08-03
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438586, 438683, H01L 218238
Patent
active
059337184
ABSTRACT:
An ESD protective device is formed having a repeatable gap dimension for reliable protection by the formation of a discharge, using the materials of the gate stack for economy and a sacrificial dielectric formed between the plug and the other terminal for repeatable definition of a discharge gap.
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El-Kareh Badih
Mandelman Jack A.
Ryan James G.
Chaudhari Chandra
International Business Machines - Corporation
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