Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-22
2005-02-22
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
06858530
ABSTRACT:
A method and structure for the electrical characterization of a semiconductor device comprising, first, forming a hole having a diameter less than 0.15 μm, wherein the hole is created using focused ion beam (FIB) etching, and through at least a protective cap layer formed over the device. The FIB etching occurs in an electron mode using a beam current less than 35 ρA with an aperture size less than 50 μm, and at an acceleration voltage of about 50 kV. Second, the surface of the hole is coated with a metal, preferably using chemical vapor deposition (CVD) and preferably using a FIB device. Third, a metal pad is deposited, preferably by FIB CVD, over the hole. Fourth, the pad is probed to determine characteristics and/or detect defects of the electrical device. The present invention allows for electrical characterization without causing damage to the device or its features.
REFERENCES:
patent: 4687940 (1987-08-01), Ward et al.
patent: 4925755 (1990-05-01), Yamaguchi et al.
patent: 5026664 (1991-06-01), Hongo et al.
patent: 5104684 (1992-04-01), Tao et al.
patent: 5182231 (1993-01-01), Hongo et al.
patent: 5376883 (1994-12-01), Kaito
patent: 5504340 (1996-04-01), Mizumura et al.
patent: 5574280 (1996-11-01), Fujii et al.
patent: 6177670 (2001-01-01), Sugiyama
patent: 6514881 (2003-02-01), Coffman
patent: 6630395 (2003-10-01), Kane et al.
patent: 62040723 (1987-02-01), None
patent: 63178544 (1988-07-01), None
patent: 2178930 (1990-07-01), None
patent: 2180035 (1990-07-01), None
patent: 4127526 (1992-04-01), None
patent: 8139099 (1996-05-01), None
Fischer Lawrence S.
Herschbein Steven B.
Hong Ying
Kane Terence
Tenney Michael P.
C. Li Todd M.
International Business Machines - Corporation
Weiss Howard
LandOfFree
Method for electrically characterizing charge sensitive... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for electrically characterizing charge sensitive..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for electrically characterizing charge sensitive... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3445790