Method for efficiently driving a phase change memory device

Details Method for efficiently driving a phase change memory device Method for efficiently driving a phase change memory device

2011-08-16

2011-08-16

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S185190

Reexamination Certificate

active

08000132

ABSTRACT:
A method for efficiently driving a phase change memory device is presented that includes the operational procedures of writing, reading, comparing and changing. The phase change memory device has a resistor configured to sense a crystallization state changed by currents so as to store data corresponding to the crystallization state. The writing operation writes data having a first state in a corresponding unit cell of the phase change memory device. The reading operation reads a cell data stored in the unit cell. The comparing operation compares the data having the first state with the cell data read from the unit cell to verify whether or not the data having the first state is the same as the cell data. The changing operation changes a write condition when the data having a first state is different from that of the cell data.

REFERENCES:
patent: 7751233 (2010-07-01), Kang et al.
patent: 2006/0158948 (2006-07-01), Fuji

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