Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2011-01-04
2011-01-04
Chu, Chris (Department: 2815)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S121000, C438S457000, C257SE25013, C257S685000, C257S686000
Reexamination Certificate
active
07863101
ABSTRACT:
In a stacking semiconductor device in which a first-layer and a second-layer semiconductor devices are stacked and bonded with a solder, warpage occurs due to a difference in thermal expansion coefficient of constituent members or a difference in elastic modulus of individual members. Therefore, between the first-layer and the second-layer semiconductor devices are provided an external connection terminal of solder and a thermosetting resin, and the stacking semiconductor device is heated at 150 to 180° C., which are the temperatures of preheating for reflow of the solder, for 30 to 90 seconds. Thereby the warpage of the first-layer semiconductor device is reduced and the thermosetting resin is cured completely in this state. Then, the temperature is raised to a reflow temperature of the solder and solder bonding using the external connection terminal is performed. Thereby, the bonding reliability of a solder-bonded portion of the stacking semiconductor device is considerably improved.
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Suzuki Takehiro
Takeuchi Yasushi
Canon Kabushiki Kaisha
Chu Chris
Fitzpatrick ,Cella, Harper & Scinto
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