Method for dry-etching a platinum thin film

Details Method for dry-etching a platinum thin film Method for dry-etching a platinum thin film

1997-04-17

1999-11-02

Breneman, Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 75, H01L 213065

Patent

active

059763949

ABSTRACT:
A method for dry etching a metallic thin film (i.e., platinum thin film) is disclosed whereby a clean metallic thin film can be formed by restraining redeposition of the metal. The etching gas includes a mixed gas including Cl.sub.2 and SiCl.sub.4 whereby a plasma of the mixed gas generates reactive species to react with the metallic thin film and form volatile residua that can be desorbed from the etched surface.

REFERENCES:
patent: 4135998 (1979-01-01), Gniewek et al.
patent: 5854104 (1998-12-01), Onishi et al.

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