Method for driving nonvolatile semiconductor memory device

Details Method for driving nonvolatile semiconductor memory device Method for driving nonvolatile semiconductor memory device

2011-06-28

2011-06-28

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185180

Reexamination Certificate

active

07969789

ABSTRACT:
In a nonvolatile semiconductor memory device having n (n is an integer of two or more) electrode films stacked and having charge storage layers provided above and below each of the electrode films, when data “0” is written by injecting electrons into the charge storage layer on a source line side of a memory cell of the number k (k is an integer of 1 to (n−1)) as counted from an end on a bit line side in a selected semiconductor pillar, positive program potential is given to the electrode film of the number 1 to k as counted from the bit line side, and 0 V is given to the electrode film of the number (k+1) to n, therewith positive potential is given to the bit line and 0 V is given to the source line.

REFERENCES:
patent: 6727544 (2004-04-01), Endoh et al.
patent: 6870215 (2005-03-01), Endoh et al.
patent: 7023739 (2006-04-01), Chen et al.
patent: 7233522 (2007-06-01), Chen et al.
patent: 2007/0252201 (2007-11-01), Kito et al.
patent: 2007-266143 (2007-10-01), None

Affiliated with

Also associated with

Rating

Method for driving nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for driving nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for driving nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2662956