Method for doping polysilicon and method for fabricating a...

Details Method for doping polysilicon and method for fabricating a... Method for doping polysilicon and method for fabricating a...

2011-04-05

2011-04-05

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S486000, C257SE21414

Reexamination Certificate

active

07919373

ABSTRACT:
A method for doping polysilicon improves a doping profile during plasma doping and includes forming a silicon layer using two separate operations. After forming a first silicon layer, thermal annealing is performed to crystallize the first silicon layer, such that the uniformity of a doping concentration according to the depth of a layer inside is improved during plasma doping. Additionally, a doping concentration at the interface between a polysilicon layer and a gate oxide layer is increased. A by-product deposition layer is reduced, which is formed on the surface of a polysilicon layer due to the increase of a doping concentration in a polysilicon layer. As a result, the dopant loss, which is caused by the removing and cleansing of an ion implantation barrier used during doping, is reduced.

REFERENCES:
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Korean Patent No. 10-2000-0086562 Jong-Hyeok Oh, “The semiconductor device fabricating method having dual polysilicon gate structure” Dec. 30, 2000 Korean Patent.
10-2008-0036657 Korean office action dispatched on Mar. 11, 2010.

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