Method for doped shallow junction formation using direct gas-pha

Details Method for doped shallow junction formation using direct gas-pha Method for doped shallow junction formation using direct gas-pha

1996-10-04

2000-04-11

Everhart, Caridad

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438530, 438918, H01L 2122, H01L 2138

Patent

active

060487828

ABSTRACT:
Halides of a dopant species may be used as a dopant gas source to form shallow doped junctions using a direct gas-phase doping (GPD) process. These halides can also be combined with a carrier gas. Some advantages over conventional gas-phase doping processes include shallower junctions, shorter process times, lower processing temperature, and the elimination of a separate surface cleaning step for native oxide removal.

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