Method for dividing substrate

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure

Reexamination Certificate

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Details

C438S461000, C438S460000, C438S113000

Reexamination Certificate

active

07459377

ABSTRACT:
The present invention aims at providing a method for dividing a substrate that is capable of dividing each substrate into chips in the same square-like form without causing chip breaking and capable of forming all cleaved facets flat. In the method for dividing a substrate of the present invention, an electron beam1with the intensity that causes a dislocation inside the substrate is irradiated to a substrate surface2to generate a crack starting from such dislocation, and a cleaved facet5is formed to divide the substrate.

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English Language Abstract of JP 2003-332273.
English Language Abstract of JP 8-236867.
English Language Abstract of JP 10-242570.
Abstract of JP 10-070335.

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