Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2005-06-07
2008-12-02
Le, Dung A (Department: 2818)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C438S461000, C438S460000, C438S113000
Reexamination Certificate
active
07459377
ABSTRACT:
The present invention aims at providing a method for dividing a substrate that is capable of dividing each substrate into chips in the same square-like form without causing chip breaking and capable of forming all cleaved facets flat. In the method for dividing a substrate of the present invention, an electron beam1with the intensity that causes a dislocation inside the substrate is irradiated to a substrate surface2to generate a crack starting from such dislocation, and a cleaved facet5is formed to divide the substrate.
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Ueda Daisuke
Ueda Tetsuzo
Greenblum & Bernstein P.L.C.
Le Dung A
Panasonic Corporation
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