Method for distortion correction in a microlithographic...

Photocopying – Projection printing and copying cameras – Distortion introducing or rectifying

Reexamination Certificate

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C355S053000, C355S077000

Reexamination Certificate

active

07372539

ABSTRACT:
For the correction of anamorphism in the case of a projection lens of an EUV projection exposure apparatus for wafers it is proposed to tilt the reticle bearing the pattern to be projected and preferably also the wafer by a small angle about an axis that is perpendicular to the axis A of the lens and perpendicular to the scan direction and that in each instance passes through the middle of the light field generated on the reticle or on the wafer. For the correction of a substantially antisymmetric quadratic distortion the reticle and/or the substrate is instead rotated about an axis of rotation that is disposed at least approximately parallel to an optical axis of the projection lens.

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patent: 6262792 (2001-07-01), Higashiki
patent: 6549270 (2003-04-01), Ota
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patent: 2003/0003383 (2003-01-01), Van Der Werf et al.
patent: 1039510 (2000-09-01), None
Chapman et al., entitled “A Rigorous Method for Compensation Selection and Alignment of Microlithographic Optical System,” published by Lawrence Livermore National Laboratory of Livermore, CA, SPIE vol. 3331, pp. 102-103.
Descour et al., entitled “Misalignment modes in high-performance optical systems,” published by Optical Sciences Center, University of Arizona, Tucson, AR, Jul. 2000, Optical Engineering vol. 39 No. 7, pp. 1737-1747.
David M. Williamson, entitled “Compensator selection in the tolerancing of a microlithographic lens,” published by The Perkin-Elmer Corporation of Norwalk, Connecticut, 1989, SPIE vol. 1049, pp. 178-186.

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