Method for developing poly(methacrylic anhydride) resists

Details Method for developing poly(methacrylic anhydride) resists Method for developing poly(methacrylic anhydride) resists

1987-01-07

1988-10-11

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430326, 430327, 430330, 430331, G03C 500

Patent

active

047771194

ABSTRACT:
The present invention relates to a process for forming an image with a positive resist, said process involves the steps of forming on a substrate a positive resist layer of poly(methacrylic anhydride). The resist layer baked at a temperature of 200.degree. C. to 350.degree. C. and thereafter irradiated with a pedetermined pattern of ionizing radiation. The irradiated area is then developed utilizing a developer solvent that is composed of solution of a base selected from the group consisting of alkali metal hydrozides, ammonium hydroxides (including quarternary ammonium hydroxides), alkali metal alkoxides and alkali metal carbonates; and a hydroxylic solvent selected from the group consisting of branched or straight chain alcohols having a C.sub.1 -C.sub.12 carbon content and water or mixtures thereof; and rinsing the resist with the same solvent selected above.

REFERENCES:
patent: 4087569 (1978-05-01), Hatazakis
patent: 4264715 (1981-04-01), Miura et al.
patent: 4341850 (1982-07-01), Coane
patent: 4508812 (1985-04-01), Brault
Grieco et al., "Photerjist Developer compounds", IBM Tech. Disc. Bull. vol. 13, (7), Dec. 1970, p. 2009.

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