Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1999-03-30
2000-11-28
Bowers, Charles
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
438458, 438800, 438510, H01L 21425
Patent
active
061534978
ABSTRACT:
A method for determining a cause for defect formation in an insulating material layer deposited on an electrically conductive layer on a wafer surface is disclosed. In the method, on top of a semi-conducting wafer which has a first insulating material layer deposited, a second insulating material layer is deposited to replace an electrically conductive layer. A third insulating material layer is then deposited on top of the second insulating layer and a water jet which has a high pressure is scanned across a top surface of the third insulating layer with the wafer held in a stationary position. Surface defects are then counted in the predetermined path on the top surface of the third insulating layer for determining the cause for defect formation. When no defects are found, the formation is attributed to electrostatic discharges occurring in the metal conductive layer.
REFERENCES:
patent: 5472143 (1995-12-01), Bartels et al.
patent: 5538816 (1996-07-01), Hasimoto et al.
patent: 6013563 (2000-01-01), Henley et al.
patent: 6013567 (2000-01-01), Henley et al.
Chang Chao-Hsin
Huang Der-Fang
Hung Chih-Chien
Yeh Renn-Shyan
Bowers Charles
Schillinger Laura
Taiwan Semiconductor Manufacturing Co. Ltd
LandOfFree
Method for determining a cause for defects in a film deposited o does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for determining a cause for defects in a film deposited o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for determining a cause for defects in a film deposited o will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1725210